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Tomás Palacios Gutiérrez by ECUSA Seminars

  • Real Colegio Complutense 26 Trowbridge Street Cambridge, MA, 02138 United States (map)

The Boston chapter of Spanish Scientists in the USA (ECUSA, Españoles Científicos en Estados Unidos), in collaboration with the Real Colegio Complutense at Harvard, is pleased to invite you to a special seminar "GaN and Graphene: Extreme Materials for the Future of Electronics” which will take place at the Real Colegio Complutense (26 Trowbridge St, Cambridge, 02138 MA) on December 10, 2015 at 6:15 pm.

Our speaker will be Dr. Tomas Palacios, the Emmanuel E. Landsman Career Development Associate Professor of Electrical Engineering and Computer Science at Massachusetts Institute of Technology (MIT). His research is focused on the design, processing and characterization of new electronic devices, biosensors and bioactuators for power generation and conversion. Among other recognitions, Prof. Palacios has been awarded the DARPA Young Faculty Award, the Office of Naval Research’ Young Investigator Award and the National Science Foundation CAREER Award. 

Come join us at the Real Colegio Complutense in Cambridge to learn firsthand about the two new semiconductor materials whose extreme properties have the potential to push electronics for another forty years: Gallium Nitride (GaN) and graphene. By using GaN in lighting and power electronics more than 20% of the world's energy consumption could be saved, while graphene will enable ubiquitous electronics, embedded on every object around us.

This free seminar is open to ECUSA members and to the general public interested in science. The event will be followed by a networking reception.

Registration is required. Please click "RSVP" to sign up. The program will be in English.